Macro to monitor n-p bump

ABSTRACT

A technique relates to fabricating a macro for measurements utilized in dual spacer, dual epitaxial transistor devices. The macro is fabricated according to a fabrication process. The macro is a test layout of a semiconductor structure having n-p bumps at junctions between NFET areas and PFET areas. Optical critical dimension (OCD) spectroscopy is performed to obtain the measurements of the n-p bumps on the macro. An amount of chemical mechanical polishing is determined to remove the n-p bumps on the macro based on the measurements of the n-p bumps on the macro. Chemical mechanical polishing is performed to remove the n-p bumps on the macro. The amount previously determined for the macro is utilized to perform chemical mechanical polishing for each of the dual spacer, dual epitaxial layer transistor devices having been fabricated under the fabrication process of the macro in which the fabrication process produced the n-p bumps.

BACKGROUND

The present invention relates to semiconductor device manufacturingtechniques, and more specifically, to the formation of macros as layoutsto monitor a bump formed at the junction of an n-type area and p-typearea.

While the planar field effect transistor (FET) may appear to havereached the end of its scalable lifespan, the semiconductor industry hasfound an alternative approach with FinFETs. FinFET technology is viewedby many as the best choice for next generation advanced processes.

With advanced geometry planar FET technologies, such as 20 nanometer(nm), the source and the drain encroach into the channel, making iteasier for leakage current to flow between them and in turn making itvery difficult to turn the transistor off completely. FinFETs arethree-dimensional structures that rise above the substrate and resemblea fin, hence the name. Certain techniques are utilized to form the finsfor n-channel FETs and p-channel FETs.

SUMMARY

According to one embodiment, a method of fabricating a macro formeasurements utilized in dual spacer, dual epitaxial transistor devicesis provided. The method includes fabricating the macro according to afabrication process, in which the macro is a test layout of asemiconductor structure having n-p bumps at junctions between NFET areasand PFET areas, and performing optical critical dimension (OCD)spectroscopy to obtain the measurements of the n-p bumps on the macro.The method also includes determining an amount of chemical mechanicalpolishing to remove the n-p bumps on the macro based on the measurementsof the n-p bumps on the macro, and performing chemical mechanicalpolishing to remove the n-p bumps on the macro. The amount previouslydetermined for the macro is utilized to perform chemical mechanicalpolishing for each of the dual spacer, dual epitaxial layer transistordevices having been fabricated under the fabrication process of themacro in which the fabrication process produced the n-p bumps.

According to one embodiment, a method of configuring macros formeasurements utilized in dual spacer, dual epitaxial transistor devicesis provided. The method includes fabricating a first macro as a firsttest structure having a first type of n-p bumps, obtaining firstmeasurements of the first type of n-p bumps on the first macro,fabricating a second macro as a second test structure having a secondtype of n-p bumps, and obtaining second measurements of the second typeof n-p bumps on the second macro. For first dual spacer, dual epitaxiallayer transistor devices formed to have the first type of n-p bumpsaccording to the first macro, the first type of n-p bumps in the firstdual spacer, dual epitaxial layer transistor devices are polishedaccording to the first measurements such that the first type of n-pbumps are removed. For second dual spacer, dual epitaxial layertransistor devices formed to have the second type of n-p bumps accordingto the second macro, the second type of n-p bumps in the second dualspacer, dual epitaxial layer transistor devices are polished accordingto the second measurements such that the second type of n-p bumps areremoved.

Additional features and advantages are realized through the techniquesof the present invention. Other embodiments and aspects of the inventionare described in detail herein and are considered a part of the claimedinvention. For a better understanding of the invention with theadvantages and the features, refer to the description and to thedrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features, and advantages ofthe invention are apparent from the following detailed description takenin conjunction with the accompanying drawings in which:

FIG. 1 illustrates a transistor structure having been fabricated with adual spacer, dual epi scheme according to an embodiment;

FIGS. 2A through 2D illustrate fabrication of the transistor structureusing the dual spacer, dual epi scheme according to an embodiment, inwhich:

FIG. 2A illustrates a cross-sectional view of the structure;

FIG. 2B illustrates etching to deposit an NFET epitaxial layer;

FIG. 2C illustrates depositing a second spacer; and

FIG. 2D illustrates etching to deposit PFET epitaxial layer;

FIGS. 3A through 3I illustrate a fabrication process of a macro utilizedin optical critical dimension (OCD) measurements to characterize n-pbumps according to an embodiment, in which:

FIG. 3A is a top down view showing a dummy gate covering the substrate;

FIG. 3B is a top down view showing gate patterning and etching;

FIG. 3C is a cross-sectional view of the macro with a hardmask on topthe macro;

FIG. 3D is a cross-sectional view of depositing the first spacer on thehardmask;

FIG. 3E is an abbreviated top down view that omits certain elements;

FIG. 3F is a cross-sectional view illustrating opening above PFETregions/areas;

FIG. 3G is a cross-sectional view of depositing a second spacer;

FIG. 3H is a cross-sectional view of opening the NFET regions/areas; and

FIG. 3I is a cross-sectional view of the macro after performing opticalcritical dimension measurements and accordingly performing chemicalmechanical polishing to remove the n-p bumps;

FIGS. 4A and 4B illustrate abbreviated conceptual views of arrays withvariable bump widths in the macro according to an embodiment;

FIGS. 5A and 5B illustrate abbreviated conceptual views of arrays withvariable bump widths, variable gate lengths, and variable gate pitchesin the macro according to an embodiment;

FIG. 6 is a block diagram of a system according to an embodiment;

FIG. 7 is a method of fabricating a macro for measurements utilized inthe actual dual spacer, dual epitaxial transistor devices according toan embodiment; and

FIG. 8 is a method of configuring macros for measurements utilized indual spacer, dual epitaxial transistor devices according to anembodiment.

DETAILED DESCRIPTION

Dual spacer and dual epitaxial layers (epi) for n-type (n-channel) fieldeffect transistors (NFET) and p-type (p-channel) PFET are utilized tooptimize the junction between the n-type and p-type (such as thesource/drain) regions, thereby growing the fins (i.e., epitaxial layers)of the finFET device. However, this scheme may introduce a bump regionat n-p transition region (such as n-p bumps), which will impact thesubsequent process, especially the polysilicon open process forreplacement metal gate (RMG). Embodiments provide macros, which are testlayout semiconductor structures, for monitoring the size of n-p bumps.By being able to remove the n-p bumps in the macro, embodiments can thenremove the n-p bumps in the actual dual spacer, dual epitaxialtransistor devices.

Embodiments introduce several new optical critical dimension (OCD)macros to monitor the bump size at n-p transition regions. FIG. 1illustrates top down view of a transistor structure 200 (i.e., a finFET)having been fabricated with a dual spacer, dual epi scheme according toan embodiment. FIG. 1 illustrates the transistor structure 200 having anNFET area 10 with NFET epitaxial layer 12 (i.e., NFET fin), a PFET area20 with PFET epitaxial layer 22 (i.e., PFET fin), and a dummy gate 30,while some details are not shown. A cross-sectional view is taken alongthe line X-X′ to illustrate the n-p bump in a fabrication process shownin FIGS. 2A-2D.

FIGS. 2A through 2D illustrate fabrication of the transistor structure200 (finFET) using the dual spacer, dual epi scheme. In FIGS. 2A through2D, cross-sectional views are shown along the A-A line in FIG. 1.

In FIG. 2A, the structure 200 includes a substrate 100, shallow trenchisolation (STI) areas 110, the dummy gate 30, a hardmask 120, and afirst spacer 130. FIG. 2A also shows the shallow trench isolation 110between the NFET area 10 and the PFET area 20 in the substrate 100.

FIG. 2B shows PFET spacer etching of the first spacer 130 and hardmask120 over the PFET area 20 and epitaxial layer growth on the PFET area 20(e.g., PFET epitaxial layer 22 (fin) in FIG. 1). Because of the openPFET area, the hardmask 120 is exposed over the PFET area 20 and thePFET area 20 is exposed, while the NFET area 10 remains protected by thefirst spacer 130. The PFET epitaxial layer 22 is grown to make a fin infinFET technology as understood by one skilled in the art. The PFETepitaxial layer 22 is not shown in the cross-sectional view of FIG. 2B,but the PFET epitaxial layer 22 can be seen in the top down view of FIG.1.

FIG. 2C shows that a second spacer 140 is deposited on top of thetransistor structure 200. The second spacer 140 protects the previouslygrown epitaxial layer 22 of the PFET area 20. Although not shown in thecross-sectional view of FIG. 2C, the second spacer 140 covers thepreviously grown PFET epitaxial layer 22 in FIG. 1. FIG. 1 shows theview after the second spacer 140 has been removed.

FIG. 2D shows NFET spacer etching of the first spacer 130, second spacer140, and hardmask 120 over the NFET area 10 and epitaxial layer growthon the NFET area 10 (e.g., NFET epitaxial layer 12 (fin) in FIG. 1). Thehardmask 120 and the NFET area 10 are exposed in the open NFET areawhile the PFET area 20 remains protected by the second spacer 140. TheNFET epitaxial layer 12 is grown to make the finFET. Although the NFETepitaxial layer 12 is not visible in the cross-sectional view of FIG.2D, the deposited NFET epitaxial layer 12 can be seen in the top downview in FIG. 1. This dual spacer (i.e., spacers 130 and 140), dual epischeme (i.e., depositing PFET epitaxial layers and NFET epitaxiallayers) causes the formation of an n-p bump 150. The n-p bump 150 isformed at the junction between the NFET area 10 and PFET area 20 as aresult of the first spacer 130, second spacer 140 and hardmask 120,along with respective etching. Monitoring the size of this n-p bump 150is needed and embodiments provide macros and methods to perform themonitoring and subsequent polishing/planarization to remove the n-pbumps 150 according to the macro. It is noted that the NFET area 10 andthe PFET area 20 extend in the y-axis, and likewise the spacer layers130 and 140 and hardmask layer 120 extend in the y-axis to cover theNFET and PFET areas according to the etching in FIGS. 2A-2D, asunderstood by one skilled in the art.

FIGS. 3A through 3I illustrate a fabrication process of a macro 300utilized in optical critical dimension (OCD) measurements tocharacterize the n-p bumps 150 and then remove the n-p bumps 150 inanticipation to utilize the same fabrication process to then fabricatethe actual dual spacer, dual epitaxial transistor devices 650 in FIG. 6according to an embodiment. The macro 300 is a test layout that isutilized for OCD measurement, and the macro 300 generates the same typeof n-p bump 150 that is in actual dual spacer, dual epitaxial layertransistor products/devices 650. After polishing, the actual dualspacer, dual epitaxial transistor devices 650 have further processingsuch as replacement metal gate (RMG) to remove the dummy gate 30, andthen the replacement metal gate is deposited in the recesses left fromthe dummy gates 30, as understood by one skilled in the art.

Once optical critical dimension (OCD) measurements are taken (by OCDmachine 605 in FIG. 6) of the n-p bumps 150 in the macro 300(semiconductor test layout) (such as height (thickness), width, and/ordepth), a determination may be made about how much chemical mechanicalpolishing/planarization (CMP) is needed to remove (planarize) the n-pbump 150. Chemical mechanical polishing/planarization is a process ofsmoothing surfaces with the combination of chemical and mechanicalforces (e.g., by a CMP machine 610 shown in FIG. 6).

Based on the fabrication process of the macro 300, the actual dualspacer, dual epitaxial transistor devices 150 having the NFETs and PFETsusing the dual spacer, dual epi scheme are fabricated in massivequantities according to the specification of the macro 300. This resultsin the actual dual spacer, dual epitaxial layer transistordevices/products 150 having the same dimensions for n-p bumps 150 as thetest macro 300, and the CMP machine 610 is set up (using the samespecifications as the earlier macro 300) to polish away each of the n-pbumps 150 in the actual dual spacer, dual epitaxial layer transistorproducts/devices 650. The information collected from the macros 300 mayinclude the spacer thickness on top of gate hardmask 105 and bump 150,gate hardmask thickness erosion 120, and their uniformity respectivelyacross macro 300 (e.g., across the chip). The macro 300 is a chip.

FIG. 3A is a top down view showing the dummy gate layer 30 covering thesubstrate 100. Cross-sectional views are taken along the X-X′ line. FIG.3B is a top down view showing gate patterning and etching of the dummygate layer 30. The substrate 100 may be silicon, germanium,silicon-on-insulator (SOI), etc. The dummy gate layer 30 may bepolysilicon.

FIG. 3C illustrates a cross-sectional view of the structure with thehardmask 120 deposited on top of the macro 300. The hardmask 120 ispatterned and etched. It is noted that the substrate 100 may alsoinclude the shallow trench isolation areas 110, the NFET areas 10, andPFET areas 20. The hardmask 120 may be silicon nitride, silicon dioxide,aluminum oxide, and/or hafnium oxide. The thickness (in the z-axis) ofthe hardmask 120 may be in the range of 30-50 nm.

FIG. 3D illustrates a cross-sectional view of depositing the firstspacer 130 over the hardmask 120. The first spacer 130 may be siliconnitride. The first spacer 130 may have a thickness of in the range of8-10 nm.

FIG. 3E shows an abbreviated top down view that omits the hardmask 120and first spacer 130 for clarity. In FIG. 3E, the white stripes areshown as the first spacer etching of the first spacer 130 (and partialetching of the hardmask 120). Correspondingly, FIG. 3F is across-sectional view illustrating opening the PFET region/area 20,etching the first spacer 130, partially etching the hardmask 120, anddepositing the PFET epitaxial layer 22 (shown in FIG. 1). The recesses305, where the first spacer 130 is etched way and hardmask 120 ispartially etched, in FIG. 3F are represented by the white stripes inFIG. 3E. The etching depth of partially etching in the hardmask 120 mayrange from 10-15 nm (i.e., even after the first spacer 130 has beenetched away). The distance between the recesses 305 (i.e., recess pitch)affects the height of the n-p bumps 150.

FIG. 3G illustrates a cross-sectional view of depositing the secondspacer 140 on top of the macro 300. The second spacer 140 is formed ontop of the first spacer 130 and the hardmask 120. The second spacer 140is also deposited in the recesses 305. The second spacer 140 may besilicon nitride, and the second spacer 140 may have a thickness of inthe range of 3-5 nm.

FIG. 3H illustrates a cross-sectional view of opening the NFETregion/area 10, by etching the first spacer 130, second spacer 140, andhardmask 120 over the NFET area 10, and then depositing the NFETepitaxial layer 12 (shown in FIG. 1) in the NFET open area 10. In FIG.3H, the etching creates recesses 320 which do not have the second spacer140 at the bottom, unlike recesses 305. To form the recesses 320, thefirst spacer 130 and the second spacer 140 are completely etched whilethe hardmask 120 is partially etched. In FIG. 3H, the depth (in thez-axis) of partially etching in the hardmask 120 may be in the range of10-15 nm (after having etched away the first and second spacers 130 and140).

By etching the first spacer 120, second spacer 130, and hardmask 120,the plurality of n-p bumps 150 are created. The n-p bumps 150 have abump height “h” in the z-axis. The height h of the n-p bump 150 is apillar comprising a vertically extended portion of the hardmask 120, thefirst spacer 130 on top of the vertically extended portion of hardmask120, and the second spacer 140 on top of the first spacer 130.

In one case, the n-p bumps 150 may have a height “h” of 30-50nanometers. In another case, the n-p bumps may have a height “h” of inthe range of 10-15 nm. The n-p bumps 150 may have a bump width “d” (inthe x axis) of in the range of 15-30 nm.

In one embodiment of the macro 300, for whichever bump height “h” andbump width “d” are chosen, each of the n-p bumps 150 are fabricated tobe uniform (consistent) in bump height and bump width. That is, the bumpheight “h” is the same for each of the n-p bumps 150 on the macro 300,and the bump width “d” is the same for each of the n-p bumps 150 on themacro 300.

In another embodiment, the bump width “d” may vary for the n-p bumps 150on the macro 300, while the bump height “h” does not vary as shown inFIGS. 4A and 4B. In one embodiment, the bump width “d” may vary, thegate length may vary, and the gate pitch between gates 30 may vary,while the while the bump height “h” does not vary as shown in FIGS. 5Aand 5B

Now referring to FIG. 3I, the macro 300 is shown after performingoptical critical dimension measurements on the n-p bumps 150 by the OCDmachine 605, and accordingly, performing chemical mechanical polishingto remove the n-p bumps by the CMP machine 610. As can be seen, the n-pbumps 150 have been planarized down to the hardmask 120 to provide asmooth surface for subsequent processing. As noted above, theinformation collected from the macro 300 during OCD measurements by theOCD machine 605 include the spacer thickness of both the first andsecond spacers 130 and 140 on top of gate hardmask 105. Also, the OCDmeasurements include the thickness (i.e., height “h” in the z-axis) ofthe bumps 150 which are formed by the spacer thickness of the first andsecond spacers 130 and 140 combined with the extended portions ofhardmask 120 forming the bump 150.

The OCD machine 605 measures the bump height “h”, bump width “d”, thedepth of the n-p bumps 150, and the spacing between the n-p bumps 150(i.e., corresponding to the bump pitch). The pattern and local densityof the underlying material greatly affects the effectiveness ofpolishing, and affects the so called “loading effect” in which a denserarray of gates from smaller pitches and/or a larger bump width requireadditional over polish to ensure the complete removal of the material(i.e., comprising the bump 150) which otherwise will cause chip yieldand performance degradation. Accordingly, the macro 300 itself providesa technique of monitoring the removal of the bump 150 in variouspatterns, and this can provide early detection on any process drift orlayout dependent issues, e.g., via repeated OCD measurements of themacro 300; the OCD measurements feedback to the polishing parameters forfine tuning during the wafer processing before the yield/performanceimpact is observed on the final production. In other words, the macro300 is monitored (i.e., measured) through OCD measurements by OCDmachine 605, polished by CMP machine 610, and then monitored again andpolished accordingly, until the bumps 150 are removed for thatparticular macro 300 (i.e., the particular pattern or layout). Thisprocess can be repeated.

FIGS. 4A and 4B illustrate abbreviated conceptual views of transistorgate terminal arrays with variable bump widths “d” in the macro 300according to an embodiment. FIGS. 4A and 4B show a combined layer 405which includes the hardmask 120, the first spacer 130, and the secondspacer 140 from FIG. 3H without delineating each layer 120, 130, 140.Since attention is directed to the n-p bumps 150, other elements areomitted, such as the substrate 100, shallow trench isolation 110, etc.

In FIGS. 4A and 4B, one side of the n-p bump region 150 is the NFET 10and the other side of the n-p bump region 150 is the PFET 20. FIG. 4Billustrates an enlarged view 410 of a portion showing variable bumpwidths “d” such as d1, d2, d3 . . . to the last bump width. For example,bump width d1 may be 40 nm, bump width d2 may be 50 nm, and another bumpwidth d3 may be 60 nm. The OCD machine 605 (shown in FIG. 6) measuresthe n-p bumps 150 to obtain measurements for, e.g., the height, width,and depth. Based on the measurements of the n-p bump 150, the CMPmachine 610 is set to remove each of the n-p bumps 150 bypolishing/planarization. The different sizes for the variable bumpwidths d1, d2, d3 of the n-p bumps 150 are a result of forming recesses305 with variable widths (in the x axis) and with variable spacingbetween the recesses 305 in FIGS. 3E and 3F. The sizes of the bumpwidths “d” (which include d1, d2, d3, etc.) may range from 40-120 nm. Inone implementation, the n-p bump widths “d” may alternate along thex-axis between a first bump width “d1” to a second bump “d2” such asalternating between 40 and 50 nm in the macro 300.

FIGS. 5A and 5B illustrate abbreviated conceptual views of arrays withvariable bump widths “d”, variable gate lengths, and variable gatepitches in the macro 300 according to an embodiment.

FIG. 5A is a top down view illustrating that there can be variable gatepitches between the dummy gates 30 such as gate pitches “p1”, “p2”, “p3”through the last pitch. In one implementation, the first pitch p1 mayhave a first distance, the second pitch p2 may have a second distance,and the third pitch p3 may have a third distance, where each of thefirst, second, and third distances are different.

In another implementation, two of the gate pitches p1, p2, p3 may be thesame while one pitch is different. In one implementation, there can bealternating gate pitches, such as alternating between pitch p1 and p2 ina periodical pattern along the y-axis of the macro 300. Example gatepitches in the macro 300 may be in the range of 60-100 nm.

FIG. 5A also shows the gate length of the dummy gates 30 in the y-axis.Various dummy gates 30 may have different gate lengths. For example, afirst dummy gate 30 may have a first gate length, a second dummy gate 30may have a second gate length, and a third gate length may have a thirdgate length, where each of the first, second, and third gate lengths aredifferent. Example gate lengths of the dummy gates 30 may be in therange of 20-50 nm. For the sake of clarity, FIG. 5A omits elements ontop of the dummy gate 30 in the z-axis.

Similar to FIGS. 4A and 4B, FIG. 5B shows the combined layer 405 whichincludes/represents the hardmask 120, the first spacer 130, and thesecond spacer 140 from FIG. 3H without delineating each layer 120, 130,140, while omitting other elements.

In FIGS. 5A and 5B, one side of the n-p bump region 150 is the NFET 10and the other side of the n-p bump region 150 is the PFET 20. FIG. 5Billustrates an enlarged view 505 of a portion showing variable bumpwidths d1, d2, d3 . . . to the last bump width, which are in addition tothe variable gate lengths and variable pitches. The OCD machine 605measures the n-p bumps 150 to obtain measurements for, e.g., the height,width, and depth. The OCD machine 605 also measures the variable gatelengths and variable pitches between gates 30. Based on the measurementsof the n-p bumps 150, the gate lengths, and the pitches, the CMP machine601 is set to remove each of the n-p bumps 150 bypolishing/planarization. Since the pattern and local density of theunderlying material greatly affects the effectiveness of polishing, adenser array of gates from smaller pitches or larger bump widths requireadditional over polish to ensure the complete removal of the material as(first) determined by measuring and polishing the macro 300, beforeforming the actual dual spacer, dual epitaxial transistor devices 650 inFIG. 6.

FIG. 6 is a block diagram of a system 600 according to an embodiment.The system 600 includes the OCD machine 605, the CMP machine 610, themacro 300 (test layout structure), and actual dual spacer, dualepitaxial transistor devices 650.

The OCD machine 605 is configured to perform material characterizationswhich include systems that are used to monitor the physical, optical,electrical, and material characteristics of compound semiconductor. TheOCD machine 605 is configured with components that provide metrologyusers with stability in focus performance, allowing precise andrepeatable measurements of critical device features (such as the n-pbumps 150). OCD machines can be obtained from Nanometrics Incorporated,1550 Buckeye Drive, Milpitas, Calif. 95035.

The CMP machine 610 is configured to provide chemical mechanicalplanarization (CMP). CMP is a polishing process, which utilizes achemical slurry formulation and mechanical polishing process to removeunwanted conductive or dielectric materials on the wafer, achieving anear-perfect flat and smooth surface upon which layers of integratedcircuitry are built.

FIG. 6 is a block diagram to illustrate that once the macro 300 isfabricated, optical critical dimension (OCD) measurements are taken bythe OCD machine 605. Particularly, the height, width, and depth of then-p bumps 150 are taken and stored. The dimensions of the OCDmeasurements are passed and/or utilized to set the CMP machine 610 inorder smooth away the n-p bumps 150 on the macro 300, and subsequently,polish actual dual spacer, dual epitaxial transistor devices 650 usingthe same polarization/polishing setting of the test macro 300. Theactual dual spacer, dual epitaxial transistor devices 650 are fabricatedunder the same conditions (specifications) as the macro 300, such thatthe elements in actual dual spacer, dual epitaxial transistor devices650 are the same as in the macro 300. The actual dual spacer, dualepitaxial transistor devices 650 have the same dimensions(height/thickness, width, depth) for elements 10, 12, 20, 22, 30, 100,110, 120, 130, 140, 150 305, 320 as in the test macro.

FIG. 7 illustrates a method 700 of fabricating the macro 300 formeasurements utilized in the actual dual spacer, dual epitaxialtransistor devices 650 according to an embodiment. Reference can be madeto FIGS. 1-6.

At block 705, the macro 300 is fabricated according to a fabricationprocess (e.g., shown in FIGS. 2 and 3), and the macro 300 is a testlayout of a semiconductor structure having a plurality of n-p bumps 150at junctions between NFET areas 10 and PFET areas 20.

At block 710, optical critical dimension (OCD) spectroscopy is performedvia OCD machine 605 to obtain measurements of the n-p bumps on themacro. For the bumps 150, the OCD measurements may include bump height,bump width, and depth of the bump.

At block 715, an amount of chemical mechanical polishing is determinedto remove the n-p bumps 150 on the macro 300 based on the measurementsof the n-p bumps on the macro 300. The amount of chemical mechanicalpolishing includes the down force (per square inch (psi)) pressing thepolishing pad down against the top of the macro 300 (i.e., against then-p bumps 150), the backpressure (psi) pressed up against the back ofthe macro 300 wafer, and the polishing time to polish away the n-p bumps150 into a planarized top surface on the macro 300. All of which isbased on measuring the bumps 150 on the macro 300 one or more times viathe OCD machine 605

At block 720, chemical mechanical polishing is performed via the CMPmachine 610 to remove the n-p bumps 150 on the macro 300. The process ofblocks 715 and 720 may be repeated as needed to remove the n-p bumps 150on the macro 300, and then the amount of chemical mechanical polishingfor the macro 300 may be utilized at parameters for the actual product,such as dual spacer, dual epitaxial layer transistor devices 650,manufactured just as the macro 300 is fabricated.

At block 725, the amount previously determined for the macro 300 isutilized to perform chemical mechanical polishing for each of the dualspacer, dual epitaxial layer transistor devices 650 having beenfabricated under the fabrication process (in blocks 705-720) of themacro 300 in which the fabrication process produced the n-p bumps 150.

The n-p bumps 150 are raised material on the macro 150. The n-p bumps150 are formed as a result of separately creating epitaxial layers 12and 22 for the NFET areas 10 and the PFET areas 22. The n-p bumps 150are formed of a hardmask 120, a first spacer 130, and a second spacer140.

The hardmask 120, the first spacer 130, and the second spacer 140forming the n-p bumps 150 are positioned above the shallow trenchisolation regions 110. The hardmask, the first spacer, and the secondspacer forming the n-p bumps 150 are positioned repeatedly between oneof the NFET areas 10 and one of the PFET areas 20.

The etching process of the hardmask, the first spacer, and the secondspacer results in formation of the n-p bumps 150. The etching processallows deposition of epitaxial layers 12 and 22 respectively for theNFET areas 10 and the PFET areas 20.

Fabricating the macro 300, according to the fabrication process,includes:

1) Forming a first spacer 130 on a hardmask 120, where the hardmask 120is on top of a plurality of gates 30 and the plurality of gates 30 areon top of a substrate 100, and where the substrate 100 has the NFETareas 10 and the PFET areas 20 (as shown in FIGS. 2A, 3B, and 3C).

2) Opening up the PFET areas 20 by removing the first spacer over thePFET areas and by etching the hardmask to a first depth over the PFETareas 20 (as shown in FIGS. 2B and 3F).

3) Depositing a PFET epitaxial layer 22 in the PFET areas (as shown inFIGS. 1, 2B, 3F).

4) Forming a second spacer 140 on top of the first spacer 130 and on topof the PFET areas previously opened up (including recesses 305) as shownin FIGS. 2C and 3G.

5) Opening up the NFET areas by removing the first spacer 130 and thesecond spacer 140 over the NFET areas 10 and by etching the hardmask 120to the first depth over the NFET areas.

6) Depositing an NFET epitaxial layer 12 in the NFET areas.

Additionally, the fabrication process of the dual spacer, dual epitaxiallayer transistor devices 650 includes: forming the first spacer 130 andthe second spacer 140 to thicknesses according to the macro 300, andetching the first spacer, the second spacer, and the hardmask to a samedegree as the macro 300, which results in the dual spacer, dualepitaxial layer transistor devices 650 having the n-p bumps 150 with asame height as the macro 300. For example, the dual spacer, dualepitaxial layer transistor devices 650 are formed as shown for the macro300 in FIGS. 2A-2D and 3A-3H to have the n-p bumps, and are thenpolished as shown for the macro 300 in FIG. 3I.

The n-p bumps 150 may have variable bump widths. The plurality of gates30 may have variable gate lengths. The plurality of gates 30 may havevariable gate pitches.

FIG. 8 illustrates a method 800 of configuring macros 300 formeasurements utilized in dual spacer, dual epitaxial transistor devices650 according to an embodiment. Reference can be made to FIGS. 1-7.

At block 805, a first macro is fabricated as a first test structurehaving a first type of n-p bumps 150. At block 810, first measurementsby the OCD machine 605 are obtained for the first type of n-p bumps 150on the first macro 300.

At block 815, a second macro is fabricated as a second test structurehaving a second type of n-p bumps 150. At block 820, second measurementsby the OCD machine 605 are obtained for the second type of n-p bumps 150on the second macro 300.

The dimensions of the first type of n-p bumps 150 on the first macro 300are different from the dimension of the second type of n-p bumps 150 onthe second macro 300.

At block 825, for first dual spacer, dual epitaxial layer transistordevices 650 formed to have the first type of n-p bumps 150 according tothe first macro, the first type of n-p bumps are polished/planarized inthe first dual spacer, dual epitaxial layer transistor devices 650according to the first measurements such that the first type of n-pbumps are removed.

At block 830, for second dual spacer, dual epitaxial layer transistordevices 650 formed to have the second type of n-p bumps 150 according tothe second macro, the second type of n-p bumps 150 arepolished/planarized in the second dual spacer, dual epitaxial layertransistor devices 650 according to the second measurements such thatthe second type of n-p bumps are removed.

The first dual spacer, dual epitaxial layer transistor devices do notrequire optical critical dimension measurements to be taken for thefirst type of n-p bumps prior to polishing, because polishing relies ofthe first measurements taken for the first macro. This is because thefirst dual spacer, dual epitaxial layer transistor devices 650 and firstmacro 300 have the same dimensions for the n-p bumps 150.

The second dual spacer, dual epitaxial layer transistor devices 650 donot require optical critical dimension measurements to be taken for thesecond type of n-p bumps 150 prior to polishing, because polishingrelies of the second measurements already taken for the second macro300. This is because the second dual spacer, dual epitaxial layertransistor devices 650 and second macro 300 have the same dimensions forthe n-p bumps 150.

The first type of n-p bumps are different from the second type of n-pbumps. The first type of n-p bumps have consistent bump widths, and thesecond type of n-p bumps have variable bump widths.

The first macro includes a first plurality of gates, the second macroincludes a second plurality of gates, and gate lengths of the firstplurality of gates are different from the second plurality of gates.

The first macro includes a first plurality of gates, the second macroincludes a second plurality of gates, and gate pitches of the firstplurality of gates are different from the second plurality of gates.

It will be noted that various semiconductor device fabrication methodsmay be utilized to fabricate the components/elements discussed herein asunderstood by one skilled in the art. In semiconductor devicefabrication, the various processing steps fall into four generalcategories: deposition, removal, patterning, and modification ofelectrical properties.

Deposition is any process that grows, coats, or otherwise transfers amaterial onto the wafer. Available technologies include physical vapordeposition (PVD), chemical vapor deposition (CVD), electrochemicaldeposition (ECD), molecular beam epitaxy (MBE) and more recently, atomiclayer deposition (ALD) among others.

Removal is any process that removes material from the wafer: examplesinclude etch processes (either wet or dry), and chemical-mechanicalplanarization (CMP), etc.

Patterning is the shaping or altering of deposited materials, and isgenerally referred to as lithography. For example, in conventionallithography, the wafer is coated with a chemical called a photoresist;then, a machine called a stepper focuses, aligns, and moves a mask,exposing select portions of the wafer below to short wavelength light;the exposed regions are washed away by a developer solution. Afteretching or other processing, the remaining photoresist is removed.Patterning also includes electron-beam lithography.

Modification of electrical properties may include doping, such as dopingtransistor sources and drains, generally by diffusion and/or by ionimplantation. These doping processes are followed by furnace annealingor by rapid thermal annealing (RTA). Annealing serves to activate theimplanted dopants.

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods, and computer program products according to variousembodiments of the present invention. In this regard, each block in theflowchart or block diagrams may represent a module, segment, or portionof instructions, which comprises one or more executable instructions forimplementing the specified logical function(s). In some alternativeimplementations, the functions noted in the block may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

What is claimed is:
 1. A method of fabricating a macro for measurementsutilized in dual spacer, dual epitaxial transistor devices, the methodcomprising: fabricating the macro according to a fabrication process,the macro being a test layout of a semiconductor structure having n-pbumps at junctions between NFET areas and PFET areas; performing opticalcritical dimension (OCD) spectroscopy to obtain the measurements of then-p bumps on the macro; determining an amount of chemical mechanicalpolishing to remove the n-p bumps on the macro based on the measurementsof the n-p bumps on the macro; performing chemical mechanical polishingto remove the n-p bumps on the macro; and utilizing the amountpreviously determined for the macro to perform chemical mechanicalpolishing for each of the dual spacer, dual epitaxial layer transistordevices having been fabricated under the fabrication process of themacro in which the fabrication process produced the n-p bumps.
 2. Themethod of claim 1, wherein the n-p bumps are raised material on themacro.
 3. The method of claim 1, wherein the n-p bumps are formed as aresult of separately creating epitaxial layers for the NFET areas andthe PFET areas.
 4. The method of claim 1, wherein the n-p bumps areformed of a hardmask, a first spacer, and a second spacer.
 5. The methodof claim 4, wherein the hardmask, the first spacer, and the secondspacer forming the n-p bumps are positioned above a shallow trenchisolation region.
 6. The method of claim 5, wherein the hardmask, thefirst spacer, and the second spacer forming the n-p bumps are positionedbetween one of the NFET areas and one of the PFET areas.
 7. The methodof claim 6, wherein an etching process of the hardmask, the firstspacer, and the second spacer results in formation of the n-p bumps. 8.The method of claim 7, wherein the etching process allows deposition ofepitaxial layers for the NFET areas and the PFET areas.
 9. The method ofclaim 1, wherein fabricating the macro, according to the fabricationprocess, includes: forming a first spacer on a hardmask, wherein thehardmask is on top of a plurality of gates and the plurality of gatesare on top of a substrate, the substrate having the NFET areas and thePFET areas; opening up the PFET areas by removing the first spacer overthe PFET areas and by etching the hardmask to a first depth over thePFET areas; depositing a PFET epitaxial layer in the PFET areas; forminga second spacer on top of the first spacer and on top of the PFET areaspreviously opened up; opening up the NFET areas by removing the firstspacer and the second spacer over the NFET areas and by etching thehardmask to the first depth over the NFET areas; and depositing a NFETepitaxial layer in the NFET areas.
 10. The method of claim 9, whereinthe fabrication process of the dual spacer, dual epitaxial layertransistor devices includes: forming the first spacer and the secondspacer to thicknesses according to the macro, etching the first spacer,the second spacer, and the hardmask to a same degree as the macro, whichresults in the dual spacer, dual epitaxial layer transistor deviceshaving the n-p bumps with a same height as the macro.
 11. The method ofclaim 10, wherein the plurality of gates have variable gate lengths. 12.The method of claim 9, wherein the n-p bumps have variable bump widths.13. The method of claim 12, wherein the plurality of gates have variablegate pitches.
 14. A method of configuring macros for measurementsutilized in dual spacer, dual epitaxial transistor devices, the methodcomprising: fabricating a first macro as a first test structure having afirst type of n-p bumps; obtaining first measurements of the first typeof n-p bumps on the first macro; fabricating a second macro as a secondtest structure having a second type of n-p bumps; obtaining secondmeasurements of the second type of n-p bumps on the second macro; forfirst dual spacer, dual epitaxial layer transistor devices formed tohave the first type of n-p bumps according to the first macro, polishingthe first type of n-p bumps in the first dual spacer, dual epitaxiallayer transistor devices according to the first measurements such thatthe first type of n-p bumps are removed; and for second dual spacer,dual epitaxial layer transistor devices formed to have the second typeof n-p bumps according to the second macro, polishing the second type ofn-p bumps in the second dual spacer, dual epitaxial layer transistordevices according to the second measurements such that the second typeof n-p bumps are removed.
 15. The method of claim 14, wherein the firstdual spacer, dual epitaxial layer transistor devices do not requireoptical critical dimension measurements to be taken for the first typeof n-p bumps prior to polishing, because polishing relies of the firstmeasurements taken for the first macro.
 16. The method of claim 14,wherein the second dual spacer, dual epitaxial layer transistor devicesdo not require optical critical dimension measurements to be taken forthe second type of n-p bumps prior to polishing, because polishingrelies of the second measurements taken for the second macro.
 17. Themethod of claim 14, wherein the first type of n-p bumps are differentfrom the second type of n-p bumps.
 18. The method of claim 14, whereinthe first type of n-p bumps have consistent bump widths; and wherein thesecond type of n-p bumps have variable bump widths.
 19. The method ofclaim 14, wherein the first macro includes a first plurality of gates;wherein the second macro includes a second plurality of gates; andwherein gate lengths of the first plurality of gates are different fromthe second plurality of gates.
 20. The method of claim 14, wherein thefirst macro includes a first plurality of gates; wherein the secondmacro includes a second plurality of gates; and wherein gate pitches ofthe first plurality of gates are different from the second plurality ofgates.